Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/974
Title: Studies of structural, optical and electrical properties of nanostructured ZnS:F films
Authors: Hurma, Tülay
Keywords: F doped ZnS film
XRD
Raman
Optical properties
Issue Date: 2018
Publisher: Elsevier Gmbh, Urban & Fischer Verlag
Abstract: ZnS and ZnS:F films were produced on glass substrates heated up to 350 +/- 5 degrees C by ultrasonic spray pyrolysis method. FTIR and Raman spectroscopy measurements were applied for determining phases included in undoped and F doped ZnS films. The scanning electron microscopy (SEM) images of the film surfaces showed that F doping caused significant contraction in particle size of the films. Energy Dispersive Spectrometer (EDS) analyses verified the presence of all expected elements including Zn, S and F. The optic characteristics of F doped ZnS films were analyzed by using their transmittance and reflectance spectra obtained by UV-vis spectrophotometer. It was determined that ZnS films exhibit a relatively high transmittance of 80% in the visible region. Refractive index values of the ZnS films showed similar conduct in 400-700 nm range. The optical band gap of the ZnS films decreased with F dopant. The electrical resistivity values of the films were calculated for the ZnS films by using current-voltage change graphics drawn in 0-100 V range through the measurement results obtained in room-temperature and dark setting and it was determined that F doping decreased resistivity values of the ZnS films.
URI: https://doi.org/10.1016/j.ijleo.2018.08.029
https://hdl.handle.net/20.500.13087/974
ISSN: 0030-4026
Appears in Collections:Elektrik-Elektronik Mühendisliği Bölümü Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu

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