Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/667
Title: High-Gain Er3+:Al2O3 On-Chip Waveguide Amplifiers
Authors: Demirtaş, Mustafa
Ay, Feridun
Keywords: Optical waveguide amplifiers
Al2O3
Er2O3
integrated optics
photonics
XPS
photoluminescence
lifetime
optical gain
Issue Date: 2020
Publisher: IEEE-Inst Electrical Electronics Engineers Inc
Abstract: In this work, high-gain on-chip Er3+ doped Al2O3 single-mode ridge waveguide amplifier device is reported. The growth of the active layer is realized using atomic layer deposition (ALD) compatible with Si processing technology. Optimization of the Al2O3 and Er2O3 growth conditions for fine-tuning the optical properties is systematically investigated. In order to optimize the active ion concentration, heterocycle structures consisting of separately optimized Al2O3 and Er2O3 are deposited. The structural and optical properties of the active layers were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, time-resolved photoluminescence, and optical gain measurements. We demonstrated up to 2.74 +/- 0.40 dB total gain and 13.71 +/- 1.97 dB/cm internal optical net gain per unit length at 1550 +/- 12 nm using a 2-mm-long device, pumped using a 980 nm laser diode at 23-mW. This work can be expanded to other rare-earth ion doping processes, paving the way to significant improvements of active on-chip applications.
URI: https://doi.org/10.1109/JSTQE.2020.3002656
https://hdl.handle.net/20.500.13087/667
ISSN: 1077-260X
1558-4542
Appears in Collections:Elektrik-Elektronik Mühendisliği Bölümü Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu

Show full item record

CORE Recommender

WEB OF SCIENCETM
Citations

5
checked on Jun 22, 2022

Page view(s)

40
checked on Oct 3, 2022

Google ScholarTM

Check

Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.