Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/610
Title: Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions
Authors: Coşkun, Fatih Mehmet
Polat, Özgür
Coşkun, Mustafa
Türüt, Abdulmecit
Çağlar, Müjdat
Durmuş, Zehra
Efeoğlu, H.
Issue Date: 2019
Publisher: Amer Inst Physics
Abstract: Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I-V measurements were performed in the 50-310K range, and consequently, the Schottky diodelike reverse and forward bias I-V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.
URI: https://doi.org/10.1063/1.5094129
https://hdl.handle.net/20.500.13087/610
ISSN: 0021-8979
1089-7550
Appears in Collections:Makine Mühendisliği Bölümü Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu

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