Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/2781
Title: A review on recent advances of chemical vapor deposition technique for monolayer transition metal dichalcogenides (MX2: Mo, W; S, Se, Te)
Authors: Aras, F. Gonca
Yılmaz, Alp
Taşdelen, H. G.
Özden, Ayberk
Ay, Feridun
Kosku Perkgöz, Nihan
Yeltik, Aydan
Keywords: Chemical vapor deposition
Patterned growth
Salt additives
Seeding promoters
Transition metal dichalcogenides
Two-dimensional materials
Chemical vapor deposition
Layered semiconductors
Molybdenum compounds
Monolayers
Sulfur compounds
Transition metals
Tungsten compounds
Chemical vapour deposition
Dichalcogenides
Patterned growth
Salt additive
Seeding promoter
Selenides
Transition metal dichalcogenides
Transition metal dichalcogenides (TMD)
Two-dimensional materials
Vapor-deposition techniques
Additives
Issue Date: 2022
Publisher: Elsevier Ltd
Abstract: Transition metal dichalcogenide (TMD) monolayers have recently garnered significant attention owing to their favorable electronic and optoelectronic properties. To date, chemical vapor deposition (CVD) growth of molybdenum di-sulfide, -selenide, and -telluride (MoS2, MoSe2, and MoTe2, respectively), and tungsten di-sulfide, -selenide, and -telluride (WS2, WSe2, and WTe2, respectively) has been widely investigated as the most promising two-dimensional (2D) TMDs. However, scalable and controllable growth of high-quality TMD monolayers remains a challenge. This review highlights the advances of CVD technique by focusing on the aspects of growth promoters, surface energy assistance and site selectivity, which are of great significance for the growth of monolayer TMDs. The challenges for high-performance applications are discussed at the end with a brief outlook on future work. © 2022 Elsevier Ltd
URI: https://doi.org/10.1016/j.mssp.2022.106829
https://hdl.handle.net/20.500.13087/2781
ISSN: 13698001
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu

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