Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/2633
Title: The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number
Authors: Sönmez, Feyza
Ardalı, Şükrü
Arpapay, Burcu
Tıraş, Engin
Keywords: InGaN/GaN Multiple quantum well
Photoluminescence
Carrier localization effect
S-shape behavior
Light-Emitting-Diodes
Barrier Growth Temperature
Optical-Properties
Carrier Localization
Ingan/Gan
Emission
Dependence
Luminescence
Thickness
Spectra
Issue Date: 2022
Publisher: Elsevier
Abstract: The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs) samples with a different quantum well number (two, three, and four) grown by molecular beam epitaxy have been studied in the temperature range between 3 and 300 K. The redshift-blueshift-redshift in the PL peak energy of InGaN well, which is known that as S-shaped behavior, is observed with increasing temperature in the investigated samples. S-shaped behavior is associated with carrier localization states and inhomogeneity in InGaN/GaN MQWs samples. This behavior is explained with the theoretical band tail model. The parameters showing the effect of carrier localization degree are determined and discussed in detail. Furthermore, it is presented the activation energy of charge carriers by using InGaN related-normalized PL peak intensity as a function of the reverse of temperature and Arrhenius function for all samples. The highest PL intensity is obtained in sample B with 3-QWs. Determining carrier localization effect and activation energy plays a vital role in luminescence efficiency and quality of InGaN/GaN MQWs devices.
URI: https://doi.org/10.1016/j.physb.2022.413703
https://hdl.handle.net/20.500.13087/2633
ISSN: 0921-4526
1873-2135
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu

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