Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/262
Title: INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS
Authors: Ay, Feridun
Keywords: Akustik
Astronomi ve Astrofizik
Biyoloji Çeşitliliğinin Korunması
Biyoloji
Kimya, Analitik
Kimya, Uygulamalı
Kimya, İnorganik ve Nükleer
Kimya, Tıbbi
Kimya, Organik
Fizikokimya
Ekoloji
Entomoloji
Çevre Bilimleri
Balıkçılık
Genetik ve Kalıtım
Limnoloji
Deniz ve Tatlı Su Biyolojisi
Matematik
Mikroskopi
Mineraloji
Mantar Bilimi
Optik
Kuş Bilimi
Fizik, Uygulamalı
Fizik, Atomik ve Moleküler Kimya
Fizik, Katı Hal
Fizik, Akışkanlar ve Plazma
Fizik, Matematik
Fizik, Nükleer
Fizik, Partiküller ve Alanlar
Spektroskopi
İstatistik ve Olasılık
Termodinamik
Taşınım
Su Kaynakları
Zooloji
Farmakoloji ve Eczacılık
Toksikoloji
Issue Date: 2018
Abstract: Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonics has been attracting a considerable interest. In this study, we report a systematic investigation of focused ion beam (FIB) induced Ga+ ion implantation in silicon on insulator (SOI) structures. The local implantation of Ga+ ions during milling is studied for a wide range of ion doses, ranging from about 1014 to 1017 ions/cm2, using X-ray photoelectron spectroscopy (XPS). Ion implantation is realized on identically sized areas for each dose by varying the FIB parameters such as dwell time and loop number. It is found that the most of the Ga+ is within the first 50 nm of Si. This suggests that it can be possible to potentially reduce optical losses caused by the ion implantation in any optical application. Methods such as thermal annealing and wet or dry chemical etching can result in removal of the 50 nm implanted layer of SOI, as a result removing the layer causing potentially high optical losses.
URI: https://doi.org/10.18038/aubtda.471568
https://hdl.handle.net/20.500.13087/262
https://search.trdizin.gov.tr/yayin/detay/326965
ISSN: 1302-3160
2667-4211
Appears in Collections:Havacılık Elektrik ve Elektroniği Bölümü Koleksiyonu
TR-Dizin İndeksli Yayınlar Koleksiyonu

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