Please use this identifier to cite or link to this item:
Title: Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces
Authors: Sun, Jiaqi
Li, Yang
Karaaslan, Yenal
Sevik, Cem
Chen, Youping
Issue Date: 2021
Publisher: Aip Publishing
Abstract: The structure and thermal boundary conductance of the wurtzite GaN/AlN (0001) interface are investigated using molecular dynamics simulation. Simulation results with three different empirical interatomic potentials have produced similar misfit dislocation networks and dislocation core structures. Specifically, the misfit dislocation network at the GaN/AlN interface is found to consist of pure edge dislocations with a Burgers vector of 1/3(1 (2) over bar 10) and the misfit dislocation core has an eight-atom ring structure. Although different interatomic potentials lead to different dislocation properties and thermal conductance values, all have demonstrated a significant effect of misfit dislocations on the thermal boundary conductance of the GaN/AlN (0001) interface. Published under an exclusive license by AIP Publishing.
ISSN: 0021-8979
Appears in Collections:Porsuk Meslek Yüksekokulu Yayın Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu

Show full item record

CORE Recommender

Page view(s)

checked on Oct 3, 2022

Google ScholarTM



Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.