Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/1635
Title: MoS2 Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells
Authors: Şar, Hüseyin
Taghipour, Nima
Lisheshar, İbrahim Wonge
Delikanlı, Savaş
Demirtaş, Mustafa
Demir, Hilmi Volkan
Perkgöz, Nihan Kosku
Keywords: 2D materials
colloidal semiconductor quantum wells
hybrid phototransistors
MoS2
sensitized phototransistors
Issue Date: 2020
Publisher: Wiley-V C H Verlag Gmbh
Abstract: A phototransistor built by the assembly of 2D colloidal semiconductor quantum wells (CQWs) on a single layer of 2D transition metal dichalcogenide (TMD) is displayed. This hybrid device architecture exhibits high efficiency in Forster resonance energy transfer (FRET) enabling superior performance in terms of photoresponsivity and detectivity. Here, a thin film of CdSe/CdS CQWs acts as a sensitizer layer on top of the MoS2 monolayer based field-effect transistor, where this CQWs-MoS2 structure allows for strong light absorption in CQWs in the operating spectral region and strong dipole-to-dipole coupling between MoS2 and CQWs resulting in enhanced photoresponsivity of one order of magnitude (11-fold) at maximum gate voltage (V-BG = 2 V) and two orders of magnitude (approximate to 5 x 10(2)) at V-BG = -1.5 V, and tenfold enhanced specific detectivity. The illumination power-dependent characterization of this hybrid device reveals that the thin layer of CQWs dominates the photogating mechanism compared to the photoconductivity effect on detection performance. Such hybrid designs hold great promise for 2D-material based photodetectors to reach high performance and find use in optoelectronic applications.
URI: https://doi.org/10.1002/adom.202001198
https://hdl.handle.net/20.500.13087/1635
ISSN: 2195-1071
Appears in Collections:Matematik Bölümü Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu

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