Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/1587
Title: The effect of Sn on electrical performance of zinc oxide based thin film transistor
Authors: Rüzgar, Şerif
Çağlar, Müjdat
Issue Date: 2019
Publisher: Springer
Abstract: In this study, we have effectively fabricated undoped and Sn-doped zinc oxide thin film transistors (ZTO TFTs) with the back-gate structure on commercially purchased p-type Si with a thermally grown SiO2 layer (thickness=100nm). The ZTO TFTs were prepared via low-cost solution based spin coating method. We investigated the structural and morphological properties of thin films and the effect of Sn doping on the electrical performance of ZnO TFTs. It has been found that the electrical parameters of the ZnO based transistors have highly affected by Sn doping. The field-effect mobility and on/off ratio of doped TFT increased similar to 40 and 10(6) times by comparison with undoped TFT, respectively. The best results were obtained from 10% Sn doped ZTO TFT with 3.83cm(2)V(-1)s(-1) the field effect mobility (mu(sat)), 1V/dec subthreshold slope (SS), 9V threshold voltage (V-th), 3x10(8) I-on/I-off ratio and a high on-current of 1.3mA.
URI: https://doi.org/10.1007/s10854-018-0313-5
https://hdl.handle.net/20.500.13087/1587
ISSN: 0957-4522
1573-482X
Appears in Collections:Elektrik-Elektronik Mühendisliği Bölümü Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu

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