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|Title:||A novel hot carrier-induced blue light-emitting device||Authors:||Mutlu, S.
Lisesivdin, S. B.
GaN multi quantum well
|Issue Date:||2021||Publisher:||Elsevier Science Sa||Abstract:||In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is investigated. A heterojunction structure is designed based on an active InGaN quantum well placed in the n-type GaN region sandwiched by the n-and p-type GaN layers. The four quantum well structure of an InGaN/GaN heterojunction where the Indium ratio is 0.16 has been grown via Metal-Organic Chemical Vapor Deposition. In order to create an anisotropic potential distribution of the heterojunction, it is aimed to fabricate TH-HELLISH-GaN device in Top-Hat HELLISH (THH) geometry for four contacts with separate n-and p-channels. High-speed I-V measurements of the device reveal an Ohmic characteristic at both polarities of the applied voltage. Integrated EL measurements reveal the threshold of the applied electric field at around 0.25 kV/cm. The emission wavelength of the device is around 440 +/- 1 nm at room temperature. (c) 2021 Elsevier B.V. All rights reserved.||URI:||https://doi.org/10.1016/j.jallcom.2021.160511
|Appears in Collections:||İnşaat Mühendisliği Bölümü Koleksiyonu|
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu
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