Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13087/1093
Title: THE CURRENT-VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60-400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO2 INTERFACIAL LAYER
Authors: Karabulut, Abdülkerim
Orak, İkram
Çağlar, Müjdat
Turut, Abdulmecit
Keywords: HfO2 thin layer
Atomic layer deposition (ALD)
Schottky barrier modification
metal-insulating layer-semiconductor structures
barrier height inhomogeneous
temperature-dependent device parameters
Gauss distribution
Issue Date: 2019
Publisher: World Scientific Publ Co Pte Ltd
Abstract: The Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor structures have been fabricated using standard thermal atomic layer deposition. We experimentally showed whether or not the HfO2 interfacial layer grown on the n-GaAs wafer modifies the barrier height (BH) of the device at the room temperature. Besides, we investigated the measurement based on temperature dependence of the device parameters from the current-voltage (I-V) characteristics of the diode in 60-400 K range with steps of 10 K. The X-ray photoelectron spectroscopy (XPS) have been carried out to characterize the surfaces of both n-GaAs wafer and HfO2 thin films. The series resistance value from the temperature-dependent I-V characteristics decreased with decreasing temperature, which is a desired positive result for the devices developed from the MOS capacitor. The BH value of 0.94 eV (300 K) has been obtained for the device with the HfO2 layer which is a higher value than the value of 0.77 eV (300 K) of the device without HfO2 layer. Therefore, we can say that the HfO2 thin layer at the metal/GaAs interface can also be used for the BH modification as a gate insulator for GaAs MOS capacitor and MOSFETs. When the temperature-dependent I-V characteristics at low temperatures have been considered, it has been observed that the current prefers to flow through the lowest BHs due to the BH inhomogeneities.
URI: https://doi.org/10.1142/S0218625X19500458
https://hdl.handle.net/20.500.13087/1093
ISSN: 0218-625X
1793-6667
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu
Çevre Mühendisliği Bölümü Koleksiyonu

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